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| SBYV27-50 THRU SBYV27-200 Vishay Semiconductors formerly General Semiconductor DO-204AC (DO-15) Soft Recovery Ultrafast Plastic Rectifier Features Reverse Voltage 50 to 200V Forward Current 2.0A 0.034 (0.86) 0.028 (0.71) Dia. 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes * Ultrafast recovery time for high efficiency * Excellent high temperature switching * Soft recovery characteristics * Glass passivated junction * High temperature soldering guaranteed: 250C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension 0.140 (3.6) 0.104 (2.6) Dia. 1.0 (25.4) min. Dimensions in inches and (millimeters) Mechanical Data Case: JEDEC DO-204AC molded plastic body over passivated chip Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 ounce, 0.4 gram Ratings at 25C ambient temperature unless otherwise specified. Maximum Ratings & Thermal Characteristics Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Minimum reverse breakdown voltage at 100A Maximum average forward rectified current 0.375" (9.5mm) lead lengths at TL = 85C Peak forward surge current 10 ms single half sine-wave superimposed on rated load (JEDEC Method) at TJ = 150C Typical thermal resistance (NOTE 1) Operating junction and storage temperature range VRRM VRMS VDC VBR IF(AV) IFSM RJA TJ, TSTG Symbols SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 Units 50 35 50 55 100 70 100 110 2.0 50 45 -55 to +150C 150 105 150 165 200 140 200 220 V V V V A A C/W C Electrical Characteristics Parameter Maximum instantaneous forward voltage at 3.0A (NOTE 2) Maximum DC reverse current at rated DC blocking voltage Ratings at 25C ambient temperature unless otherwise specified. Symbols SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 Units TJ = 25C TJ = 150C TA = 25C TA =100C VF IR trr CJ 1.07 0.88 5.0 200 15 15 V A ns pF Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length (2) Pulse test: 300s pulse width, duty cycle 2% Document Number 88736 14-May-03 www.vishay.com 1 SBYV27-50 THRU SBYV27-200 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curves Average Forward Rectified Current (A) 3.0 60 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 10ms Single Half Sine-Wave TJ = 175C Peak Forward Surge Current (A) 2.5 2.0 Resistive or Inductive Load 0.375" (9.5mm) Lead Length TL Lead Temperature 50 40 30 20 10 0 1.5 1.0 0.5 TA, Ambient Temperature P.C.B. Mounted 0.5" x 0.5" (12 x 12mm) Copper Pads 0 25 50 75 100 125 150 175 0 1 10 100 Temperature (C) Number of Cycles at 50 HZ Fig. 3 - Typical Instantaneous Forward Characteristics 100 1000 TJ = 100C 10 Pulse Width = 300s 1% Duty Cycle 1 TJ = 25C Fig. 4 - Typical Reverse Leakage Characteristics Instantaneous Reverse Leakage Current (A) Instantaneous Forward Current (A) 100 TJ = 100C 10 0.1 1 TJ = 25C 0.1 0 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Reverse Switching Characteristics 60 100 IF = 2.0A VR=30V Fig. 6 - Typical Junction Capacitance TJ = 25C f = 1.0MHZ Vsig = 50mVp-p Recovered Store Change / Reverse Recovery Time, nC/ns 40 di/dt=20A/s di/dt=50A/s di/dt=100A/s di/dt=150A/s di/dt=50A/s di/dt=20A/s 10 trr Qrr 0 0 25 50 75 100 125 150 175 30 20 Junction Capacitance, pF 50 di/dt=150A/s di/dt=100A/s 10 1 0.1 1 10 100 Junction Temperature (C) Reverse Voltage (V) www.vishay.com 2 Document Number 88736 14-May-03 |
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